CPH3455-TL-W onsemi
Hersteller: onsemiDescription: MOSFET N-CH 35V 3A 3CPH
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V
auf Bestellung 637304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1986+ | 0.24 EUR |
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Technische Details CPH3455-TL-W onsemi
Description: MOSFET N-CH 35V 3A 3CPH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 3-CPH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 35 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V.
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CPH3455-TL-W | Hersteller : onsemi |
Description: MOSFET N-CH 35V 3A 3CPH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 3-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V |
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