CPH3456-TL-W onsemi
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.5A 3CPH
Rds On (Max) @ Id, Vgs: 71mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
| Anzahl | Preis |
|---|---|
| 2295+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CPH3456-TL-W onsemi
Description: MOSFET N-CH 20V 3.5A 3CPH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 71mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 3-CPH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V.
Weitere Produktangebote CPH3456-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
CPH3456-TL-W | ON Semiconductor |
MOSFET NCH 1.8V DRIVE SERIE |
auf Bestellung 728 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CPH3456-TL-W |
![]() |
Hersteller: ON Semiconductor
MOSFET NCH 1.8V DRIVE SERIE
MOSFET NCH 1.8V DRIVE SERIE
auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH

