CPH6337-TL-W ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1695+ | 0.1 EUR |
| 1722+ | 0.1 EUR |
| 1752+ | 0.096 EUR |
| 1780+ | 0.093 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CPH6337-TL-W ON Semiconductor
Description: MOSFET P-CH 12V 3.5A 6CPH, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: 6-CPH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V.
Weitere Produktangebote CPH6337-TL-W nach Preis ab 0.077 EUR bis 0.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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CPH6337-TL-W | ON Semiconductor |
 Trans MOSFET P-CH Si 12V 3.5A 6-Pin CPH T/R |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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CPH6337-TL-W | onsemi |
Description: MOSFET P-CH 12V 3.5A 6CPH Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-CPH Vgs(th) (Max) @ Id: 1.4V @ 1mA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CPH6337-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 12V; 3.5A; 1.6W; SOT23-6 Mounting: SMD Power dissipation: 1.6W Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: P-MOSFET Gate-source voltage: 10V Case: SOT23-6 On-state resistance: 54mΩ |
auf Bestellung 2639 Stücke: Lieferzeit 14-21 Tag (e) |
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| CPH6337-TL-W | ONSEMI |
Description: ONSEMI - CPH6337-TL-W - MOSFET, P-CH, -12V, -3.5A, CPH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CPH6337-TL-W |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH Si 12V 3.5A 6-Pin CPH T/R
Trans MOSFET P-CH Si 12V 3.5A 6-Pin CPH T/R
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1593+ | 0.11 EUR |
| 1616+ | 0.1 EUR |
| 1643+ | 0.1 EUR |
| 1667+ | 0.094 EUR |
| 1695+ | 0.089 EUR |
| 1722+ | 0.084 EUR |
| 1752+ | 0.079 EUR |
| 1780+ | 0.077 EUR |
| CPH6337-TL-W |
|
Hersteller: onsemi
Description: MOSFET P-CH 12V 3.5A 6CPH
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-CPH
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: MOSFET P-CH 12V 3.5A 6CPH
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-CPH
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1514+ | 0.37 EUR |
| CPH6337-TL-W |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 12V; 3.5A; 1.6W; SOT23-6
Mounting: SMD
Power dissipation: 1.6W
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: P-MOSFET
Gate-source voltage: 10V
Case: SOT23-6
On-state resistance: 54mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 12V; 3.5A; 1.6W; SOT23-6
Mounting: SMD
Power dissipation: 1.6W
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: P-MOSFET
Gate-source voltage: 10V
Case: SOT23-6
On-state resistance: 54mΩ
auf Bestellung 2639 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2639+ | 0.3 EUR |
| CPH6337-TL-W |
|
Hersteller: ONSEMI
Description: ONSEMI - CPH6337-TL-W - MOSFET, P-CH, -12V, -3.5A, CPH
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - CPH6337-TL-W - MOSFET, P-CH, -12V, -3.5A, CPH
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.35 EUR |