Technische Details CPH6350-TL-E ON Semiconductor
Description: MOSFET P-CH 30V 6A 6CPH, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: 6-CPH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V.
Weitere Produktangebote CPH6350-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| CPH6350-TL-E | Hersteller : ON Semiconductor |
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auf Bestellung 2679 Stücke: Lieferzeit 21-28 Tag (e) |
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CPH6350-TL-E | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 6A 6-Pin CPH T/R |
Produkt ist nicht verfügbar |
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CPH6350-TL-E | Hersteller : onsemi |
Description: MOSFET P-CH 30V 6A 6CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 6-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
Produkt ist nicht verfügbar |