Technische Details CPH6354-TL-W ON Semiconductor
Description: MOSFET P-CH 60V 4A 6CPH, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 6-CPH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V.
Weitere Produktangebote CPH6354-TL-W
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CPH6354-TL-W Produktcode: 167441 |
 Transistoren > Transistoren P-Kanal-Feld |
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CPH6354-TL-W | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 4A 6-Pin CPH T/R |
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CPH6354-TL-W | Hersteller : onsemi |
Description: MOSFET P-CH 60V 4A 6CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 6-CPH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V |
Produkt ist nicht verfügbar |
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CPH6354-TL-W | Hersteller : onsemi |
Description: MOSFET P-CH 60V 4A 6CPH Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 6-CPH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V |
Produkt ist nicht verfügbar |