Technische Details CPH6443-TL-H ON Semiconductor
Description: MOSFET N-CH 35V 6A 6CPH, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 3A, 10V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: 6-CPH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 35 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V.
Weitere Produktangebote CPH6443-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| CPH6443-TL-H | Hersteller : ON Semiconductor |
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auf Bestellung 2617 Stücke: Lieferzeit 21-28 Tag (e) |
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| CPH6443-TL-H | Hersteller : ONSEMI |
Description: ONSEMI - CPH6443-TL-H - CPH6443-TL-H, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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CPH6443-TL-H | Hersteller : onsemi |
Description: MOSFET N-CH 35V 6A 6CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 6-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V |
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