CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA S-FLAT
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 700mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
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Technische Details CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA S-FLAT, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: S-FLAT (1.6x3.5), Current - Average Rectified (Io): 700mA, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR).
Weitere Produktangebote CRG07(TE85L,Q,M) nach Preis ab 0.12 EUR bis 0.62 EUR
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CRG07(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 700MA S-FLAT Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 700mA Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
auf Bestellung 4340 Stücke: Lieferzeit 10-14 Tag (e) |
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| CRG07(TE85L,Q,M) | Hersteller : Toshiba |
 Rectifiers 400V Diode High ESD 0.7 IF 1.1V 10uA |
auf Bestellung 9239 Stücke: Lieferzeit 10-14 Tag (e) |
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