Technische Details CRG09(TE85L,Q,M) Toshiba
Description: DIODE GEN PURP 400V 1A S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Weitere Produktangebote CRG09(TE85L,Q,M)
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CRG09(TE85L,Q,M) | Hersteller : Toshiba |
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auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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CRG09(TE85L,Q,M) | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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CRG09(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |