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Technische Details CRG09(TE85L,Q,M) Toshiba
Description: DIODE GEN PURP 400V 1A S-FLAT, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: S-FLAT (1.6x3.5), Current - Average Rectified (Io): 1A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR).
Weitere Produktangebote CRG09(TE85L,Q,M)
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CRG09(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE GEN PURP 400V 1A S-FLATCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 1A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
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