| Anzahl | Preis |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.18 EUR |
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Technische Details CRH01(TE85R,Q,M) Toshiba
Description: DIODE STANDARD 200V 1A SFLAT, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: S-FLAT (1.6x3.5), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR).
Weitere Produktangebote CRH01(TE85R,Q,M) nach Preis ab 0.27 EUR bis 0.79 EUR
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CRH01(TE85R,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE STANDARD 200V 1A SFLATReverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 1A Technology: Standard |
auf Bestellung 2358 Stücke: Lieferzeit 10-14 Tag (e) |
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CRH01(TE85R,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 1A SFLAT Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |