CRH01(TE85R,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.83 EUR |
28+ | 0.64 EUR |
100+ | 0.39 EUR |
500+ | 0.36 EUR |
1000+ | 0.24 EUR |
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Technische Details CRH01(TE85R,Q,M) Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 1A S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote CRH01(TE85R,Q,M) nach Preis ab 0.29 EUR bis 1.21 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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CRH01(TE85R,Q,M) | Hersteller : Toshiba | Rectifiers Diode Hi Efficiency 200V 1A |
auf Bestellung 35187 Stücke: Lieferzeit 14-28 Tag (e) |
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CRH01(TE85R,Q,M) | Hersteller : Toshiba | Diode Switching 200V 1A 2-Pin S-FLAT T/R |
Produkt ist nicht verfügbar |
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CRH01(TE85R,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 1A S-FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |