Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > CRH02(TE85L,Q,M)
CRH02(TE85L,Q,M)

CRH02(TE85L,Q,M) Toshiba Semiconductor and Storage

CRH02_Web.pdf Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 500MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
Produktrezensionen
Produktbewertung abgeben

Technische Details CRH02(TE85L,Q,M) Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 200V 500MA S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 500mA, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.

Weitere Produktangebote CRH02(TE85L,Q,M) nach Preis ab 0.2 EUR bis 0.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CRH02(TE85L,Q,M) CRH02(TE85L,Q,M) Hersteller : Toshiba CRH02_Web.pdf Diodes - General Purpose, Power, Switching 200V Vrrm 0.5A IF 50Hz .95V Vfm 35ns
auf Bestellung 1572 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
78+ 0.67 EUR
130+ 0.4 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 60
CRH02(TE85L,Q,M) CRH02(TE85L,Q,M) Hersteller : Toshiba Semiconductor and Storage CRH02_Web.pdf Description: DIODE GEN PURP 200V 500MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar