CRS08(TE85L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.20 EUR |
| 6000+ | 0.19 EUR |
| 15000+ | 0.18 EUR |
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Technische Details CRS08(TE85L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 90pF @ 10V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A, Current - Reverse Leakage @ Vr: 1 mA @ 30 V.
Weitere Produktangebote CRS08(TE85L,Q,M) nach Preis ab 0.14 EUR bis 2.29 EUR
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CRS08(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A SFLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 90pF @ 10V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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Діод Шотткі smd; Io, A = 1,5; Uзвор, В = 30; Uf (max), В = 0,36; If, А = 1,5; C, пФ @ Ur, В; F, МГц = 90 @ 10; 1; Тексп, °С = -40...+125; Темп.опір,°C/Вт = 20; I, мкА @ Ur, В = 1000 @ 30; SOD-123F (S-FLAT) |
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Produkt ist nicht verfügbar |