CRS10I30A(TE85L,QM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.099 EUR |
| 9000+ | 0.093 EUR |
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Technische Details CRS10I30A(TE85L,QM Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT, Current - Reverse Leakage @ Vr: 60 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: 150°C, Supplier Device Package: S-FLAT (1.6x3.5), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 50pF @ 10V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR).
Weitere Produktangebote CRS10I30A(TE85L,QM nach Preis ab 0.099 EUR bis 0.57 EUR
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CRS10I30A(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A SFLAT Current - Reverse Leakage @ Vr: 60 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 50pF @ 10V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
auf Bestellung 9320 Stücke: Lieferzeit 10-14 Tag (e) |
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| CRS10I30A(TE85L,QM | Toshiba |
Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 50Hz 0.7A IFM |
auf Bestellung 4870 Stücke: Lieferzeit 10-14 Tag (e) |
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| CRS10I30A(TE85L,QM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 1A SFLAT
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
auf Bestellung 9320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 50+ | 0.35 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| CRS10I30A(TE85L,QM |
|
Hersteller: Toshiba
Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 50Hz 0.7A IFM
Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 50Hz 0.7A IFM
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.57 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.12 EUR |
| 9000+ | 0.099 EUR |