CRS10I40B(TE85L,QM Toshiba Semiconductor and Storage

Description: DIODE SCHOTTKY 40V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 4863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
18+ | 0.99 EUR |
30+ | 0.60 EUR |
100+ | 0.39 EUR |
500+ | 0.29 EUR |
1000+ | 0.26 EUR |
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Technische Details CRS10I40B(TE85L,QM Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 62pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A, Current - Reverse Leakage @ Vr: 100 µA @ 40 V.
Weitere Produktangebote CRS10I40B(TE85L,QM
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CRS10I40B(TE85L,QM | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 62pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
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CRS10I40B(TE85L,QM | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |