CRS10I40B(TE85L,QM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
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Technische Details CRS10I40B(TE85L,QM Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT, Current - Reverse Leakage @ Vr: 100 µA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: S-FLAT (1.6x3.5), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 62pF @ 10V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR).
Weitere Produktangebote CRS10I40B(TE85L,QM
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CRS10I40B(TE85L,QM | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A SFLAT Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 62pF @ 10V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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CRS10I40B(TE85L,QM | Hersteller : Toshiba |
Schottky Diodes & Rectifiers 40V Vrrm 1.0A IF 50Hz 0.7A IFM |
Produkt ist nicht verfügbar |