CRS12(TE85L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 60V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
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Technische Details CRS12(TE85L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A SFLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 1A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A, Current - Reverse Leakage @ Vr: 100 µA @ 60 V.
Weitere Produktangebote CRS12(TE85L,Q,M) nach Preis ab 0.32 EUR bis 1.16 EUR
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CRS12(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 1A SFLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
auf Bestellung 4959 Stücke: Lieferzeit 10-14 Tag (e) |
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CRS12(TE85L,Q,M) | Hersteller : Toshiba |
Schottky Diodes & Rectifiers Diode Schottky 60V 1A |
Produkt ist nicht verfügbar |