CRS13(TE85L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.36 EUR |
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Technische Details CRS13(TE85L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 1A S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 40pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 60 V.
Weitere Produktangebote CRS13(TE85L,Q,M) nach Preis ab 0.4 EUR bis 1.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CRS13(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 1A S-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
auf Bestellung 3760 Stücke: Lieferzeit 21-28 Tag (e) |
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CRS13(TE85L,Q,M) | Hersteller : Toshiba | Schottky Barrier Diode |
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CRS13(TE85L,Q,M) | Hersteller : TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 20A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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CRS13(TE85L,Q,M) | Hersteller : Toshiba | Schottky Diodes & Rectifiers 30V Vrrm 1.5A IF 50Hz S-FLAT |
Produkt ist nicht verfügbar |
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CRS13(TE85L,Q,M) | Hersteller : TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 20A |
Produkt ist nicht verfügbar |