CRS14(TE85L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Technische Details CRS14(TE85L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT, Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 50 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: S-FLAT (1.6x3.5), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 90pF @ 10V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io).
Weitere Produktangebote CRS14(TE85L,Q,M) nach Preis ab 0.33 EUR bis 1.24 EUR
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CRS14(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 2A S-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 90pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
auf Bestellung 3837 Stücke: Lieferzeit 10-14 Tag (e) |
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| CRS14(TE85L,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 3837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |