CRS20I30A(TE85L,QM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 29+ | 0.61 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.23 EUR |
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Technische Details CRS20I30A(TE85L,QM Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 50pF @ 10V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A, Current - Reverse Leakage @ Vr: 60 µA @ 30 V.
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