CRZ33(TE85L,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 33V 700MW SFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 26.4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 700 mW
Supplier Device Package: S-FLAT (1.6x3.5)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Tolerance: ±10%
Packaging: Tape & Reel (TR)
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Technische Details CRZ33(TE85L,Q,M) Toshiba Semiconductor and Storage
Description: DIODE ZENER 33V 700MW SFLAT, Current - Reverse Leakage @ Vr: 10 µA @ 26.4 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Power - Max: 700 mW, Supplier Device Package: S-FLAT (1.6x3.5), Impedance (Max) (Zzt): 30 Ohms, Voltage - Zener (Nom) (Vz): 33 V, Operating Temperature: -40°C ~ 150°C, Mounting Type: Surface Mount, Package / Case: SOD-123F, Tolerance: ±10%, Packaging: Tape & Reel (TR).