CSD13202Q2 Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 22A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 6 V
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD13202Q2 Texas Instruments
Description: MOSFET N-CH 12V 22A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 5A, 4.5V, Power Dissipation (Max): 2.7W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 6 V.
Weitere Produktangebote CSD13202Q2 nach Preis ab 0.27 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD13202Q2 | Texas Instruments |
Description: MOSFET N-CH 12V 22A 6WSONPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 5A, 4.5V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 6 V |
auf Bestellung 5251 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
CSD13202Q2 | Texas Instruments |
MOSFETs N-CH Power MOSFET 12 V 9.3mohm |
auf Bestellung 38960 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD13202Q2 |
![]() |
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 22A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 6 V
Description: MOSFET N-CH 12V 22A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 6 V
auf Bestellung 5251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.61 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| CSD13202Q2 |
![]() |
Hersteller: Texas Instruments
MOSFETs N-CH Power MOSFET 12 V 9.3mohm
MOSFETs N-CH Power MOSFET 12 V 9.3mohm
auf Bestellung 38960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.04 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.27 EUR |


