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CSD13381F4T

CSD13381F4T Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13381f4
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 2.1A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+0.73 EUR
500+0.66 EUR
750+0.63 EUR
1250+0.59 EUR
1750+0.56 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD13381F4T Texas Instruments

Description: MOSFET N-CH 12V 2.1A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V.

Weitere Produktangebote CSD13381F4T nach Preis ab 0.56 EUR bis 2.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD13381F4T CSD13381F4T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13381f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1A; Idm: 7A; 500mW; PICOSTAR3
Drain current: 2.1A
Pulsed drain current: 7A
Gate-source voltage: ±8V
Drain-source voltage: 12V
Polarisation: unipolar
Case: PICOSTAR3
Kind of channel: enhancement
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 0.4Ω
Power dissipation: 0.5W
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
71+1.02 EUR
86+0.83 EUR
100+0.72 EUR
106+0.68 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD13381F4T CSD13381F4T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13381f4 Description: MOSFET N-CH 12V 2.1A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V
auf Bestellung 1884 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
14+1.28 EUR
100+0.85 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD13381F4T CSD13381F4T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13381f4 MOSFETs 12V N-Ch FemtoFET MO SFET A 595-CSD13381 A 595-CSD13381F4
auf Bestellung 5181 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.18 EUR
10+1.37 EUR
100+0.78 EUR
500+0.67 EUR
1000+0.6 EUR
5000+0.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD13381F4T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13381f4
CSD13381F4T
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1A; Idm: 7A; 500mW; PICOSTAR3
Drain current: 2.1A
Pulsed drain current: 7A
Gate-source voltage: ±8V
Drain-source voltage: 12V
Polarisation: unipolar
Case: PICOSTAR3
Kind of channel: enhancement
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 0.4Ω
Power dissipation: 0.5W
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
50+1.46 EUR
71+1.02 EUR
86+0.83 EUR
100+0.72 EUR
106+0.68 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD13381F4T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13381f4
CSD13381F4T
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 2.1A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V
auf Bestellung 1884 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.04 EUR
14+1.28 EUR
100+0.85 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD13381F4T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13381f4
CSD13381F4T
Hersteller: Texas Instruments
MOSFETs 12V N-Ch FemtoFET MO SFET A 595-CSD13381 A 595-CSD13381F4
auf Bestellung 5181 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.18 EUR
10+1.37 EUR
100+0.78 EUR
500+0.67 EUR
1000+0.6 EUR
5000+0.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH