CSD13381F4T Texas Instruments
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 283+ | 0.52 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD13381F4T Texas Instruments
Description: MOSFET N-CH 12V 2.1A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V.
Weitere Produktangebote CSD13381F4T nach Preis ab 0.46 EUR bis 1.72 EUR
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CSD13381F4T | Hersteller : Texas Instruments |
 MOSFETs 12V N-Ch FemtoFET MO SFET A 595-CSD13381F4 |
auf Bestellung 5313 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 2.1A 3-Pin PicoStar T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13381F4T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 2.1A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13381F4T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 2.1A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 6 V |
auf Bestellung 2084 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 2.1A 3-Pin PicoStar T/R |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 2.1A 3-Pin PicoStar T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 2.1A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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CSD13381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 2.1A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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| CSD13381F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.1A; Idm: 7A; 500mW; PICOSTAR3 On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Mounting: SMD Case: PICOSTAR3 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 7A Kind of package: reel; tape Drain-source voltage: 12V Drain current: 2.1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD13381F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.1A; Idm: 7A; 500mW; PICOSTAR3 On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Mounting: SMD Case: PICOSTAR3 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 7A Kind of package: reel; tape Drain-source voltage: 12V Drain current: 2.1A |
Produkt ist nicht verfügbar |