CSD13385F5T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 12V 4.3A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V
auf Bestellung 26250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.7 EUR |
| 500+ | 0.6 EUR |
| 750+ | 0.58 EUR |
| 1250+ | 0.56 EUR |
| 1750+ | 0.54 EUR |
| 2500+ | 0.53 EUR |
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Technische Details CSD13385F5T Texas Instruments
Description: MOSFET N-CH 12V 4.3A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V.
Weitere Produktangebote CSD13385F5T nach Preis ab 0.55 EUR bis 2.27 EUR
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CSD13385F5T | Hersteller : Texas Instruments |
MOSFETs 12-V N channel NexF ET power MOSFET si A 595-CSD13385F5 |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13385F5T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 4.3A 3PICOSTARPackaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V |
auf Bestellung 26509 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD13385F5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3 Pulsed drain current: 41A Gate-source voltage: ±8V Drain-source voltage: 12V Polarisation: unipolar Case: PICOSTAR3 Kind of channel: enhancement Technology: NexFET™ Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD On-state resistance: 50mΩ Power dissipation: 1.4W Drain current: 7.1A |
Produkt ist nicht verfügbar |
