CSD16322Q5C Texas Instruments
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Technische Details CSD16322Q5C Texas Instruments
Description: MOSFET N-CH 25V 21A/97A 8SON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 97A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 8V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SON, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 12.5 V.
Weitere Produktangebote CSD16322Q5C
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CSD16322Q5C | Hersteller : Texas Instruments |
 Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD16322Q5C | Hersteller : Texas Instruments |
Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD16322Q5C | Hersteller : Texas Instruments |
Description: MOSFET N-CH 25V 21A/97A 8SON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 97A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 8V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SON Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 12.5 V |
Produkt ist nicht verfügbar |
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CSD16322Q5C | Hersteller : Texas Instruments |
Description: MOSFET N-CH 25V 21A/97A 8SON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 97A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 8V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SON Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 12.5 V |
Produkt ist nicht verfügbar |