CSD16413Q5A Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 25V 24A/100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V
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Technische Details CSD16413Q5A Texas Instruments
Description: MOSFET N-CH 25V 24A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V.
Weitere Produktangebote CSD16413Q5A nach Preis ab 1.06 EUR bis 3.75 EUR
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CSD16413Q5A | Texas Instruments |
Description: MOSFET N-CH 25V 24A/100A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V |
auf Bestellung 5830 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16413Q5A | Texas Instruments |
MOSFETs N-Ch NexFET Power MO SFETs |
auf Bestellung 3383 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD16413Q5A | Texas Instruments |
N-канальний ПТ, Udss, В = 25, Id = 24, Ciss, пФ @ Uds, В = 1780, Qg, нКл = 11,7, Rds = 3,9 мОм, Ugs(th) = 1,9, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: 8-VSONP(5x6)mm Од. вим: штAnzahl je Verpackung: 2500 Stücke |
verfügbar 4 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| CSD16413Q5A |
![]() |
Hersteller: Texas Instruments
Description: MOSFET N-CH 25V 24A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V
Description: MOSFET N-CH 25V 24A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.15 EUR |
| CSD16413Q5A |
![]() |
Hersteller: Texas Instruments
MOSFETs N-Ch NexFET Power MO SFETs
MOSFETs N-Ch NexFET Power MO SFETs
auf Bestellung 3383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.07 EUR |
| 5000+ | 1.06 EUR |
| CSD16413Q5A |
![]() |
Hersteller: Texas Instruments
N-канальний ПТ, Udss, В = 25, Id = 24, Ciss, пФ @ Uds, В = 1780, Qg, нКл = 11,7, Rds = 3,9 мОм, Ugs(th) = 1,9, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: 8-VSONP(5x6)mm Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
N-канальний ПТ, Udss, В = 25, Id = 24, Ciss, пФ @ Uds, В = 1780, Qg, нКл = 11,7, Rds = 3,9 мОм, Ugs(th) = 1,9, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: 8-VSONP(5x6)mm Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 4 Stücke:


