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CSD16413Q5A Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16413q5a
Hersteller: Texas Instruments
Description: MOSFET N-CH 25V 24A/100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.05 EUR
5000+0.98 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD16413Q5A Texas Instruments

Description: MOSFET N-CH 25V 24A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V.

Weitere Produktangebote CSD16413Q5A nach Preis ab 1.06 EUR bis 3.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
CSD16413Q5A CSD16413Q5A Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16413q5a Description: MOSFET N-CH 25V 24A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
10+2.37 EUR
100+1.59 EUR
500+1.26 EUR
1000+1.15 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD16413Q5A CSD16413Q5A Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16413q5a MOSFETs N-Ch NexFET Power MO SFETs
auf Bestellung 3383 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
2500+1.07 EUR
5000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD16413Q5A Texas Instruments csd16413q5a.pdf N-канальний ПТ, Udss, В = 25, Id = 24, Ciss, пФ @ Uds, В = 1780, Qg, нКл = 11,7, Rds = 3,9 мОм, Ugs(th) = 1,9, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: 8-VSONP(5x6)mm Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 4 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
CSD16413Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16413q5a
Hersteller: Texas Instruments
Description: MOSFET N-CH 25V 24A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 12.5 V
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
10+2.37 EUR
100+1.59 EUR
500+1.26 EUR
1000+1.15 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD16413Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd16413q5a
Hersteller: Texas Instruments
MOSFETs N-Ch NexFET Power MO SFETs
auf Bestellung 3383 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
2500+1.07 EUR
5000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD16413Q5A csd16413q5a.pdf
Hersteller: Texas Instruments
N-канальний ПТ, Udss, В = 25, Id = 24, Ciss, пФ @ Uds, В = 1780, Qg, нКл = 11,7, Rds = 3,9 мОм, Ugs(th) = 1,9, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: 8-VSONP(5x6)mm Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 4 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH