CSD16414Q5 Texas Instruments

Description: MOSFET N-CH 25V 34A/100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 12.5 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +16V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSON-CLIP (5x6), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).