CSD16415Q5T Texas Instruments
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 2.23 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 1.88 EUR |
| 1250+ | 1.78 EUR |
| 2500+ | 1.66 EUR |
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Technische Details CSD16415Q5T Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V, Power Dissipation (Max): 3.2W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V.
Weitere Produktangebote CSD16415Q5T nach Preis ab 2.22 EUR bis 4.59 EUR
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CSD16415Q5T | Hersteller : Texas Instruments |
 MOSFET 25-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm 8-VSON-CLIP -55 to 150 |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16415Q5T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 25V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V |
auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16415Q5T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD16415Q5T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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CSD16415Q5T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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CSD16415Q5T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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| CSD16415Q5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 200A; 156W Technology: NexFET™ Mounting: SMD Case: VSON-CLIP8 Kind of package: reel; tape Power dissipation: 156W Application: automotive industry On-state resistance: 1.8mΩ Polarisation: unipolar Drain current: 100A Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 200A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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CSD16415Q5T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 25V 100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V |
Produkt ist nicht verfügbar |
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| CSD16415Q5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 200A; 156W Technology: NexFET™ Mounting: SMD Case: VSON-CLIP8 Kind of package: reel; tape Power dissipation: 156W Application: automotive industry On-state resistance: 1.8mΩ Polarisation: unipolar Drain current: 100A Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 200A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |