CSD17305Q5A Texas Instruments
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.76 EUR |
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Technische Details CSD17305Q5A Texas Instruments
Description: MOSFET N-CH 30V 29A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V.
Weitere Produktangebote CSD17305Q5A nach Preis ab 0.88 EUR bis 3.08 EUR
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CSD17305Q5A | Hersteller : Texas Instruments |
 MOSFETs 30V N Channel NexFET Power MOSFET |
auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17305Q5A | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 30V; 60A; 3.1W; VSONP8; SMT Type of transistor: N-MOSFET Technology: NexFET™ Drain-source voltage: 30V Drain current: 60A Power dissipation: 3.1W Case: VSONP8 Gate-source voltage: 10V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement Electrical mounting: SMT |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17305Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 29A 8-Pin VSONP EP T/R |
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CSD17305Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 29A 8-Pin VSONP EP T/R |
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CSD17305Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 29A 8-Pin VSONP EP T/R |
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CSD17305Q5A | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 29A/100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V |
Produkt ist nicht verfügbar |
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CSD17305Q5A | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 29A/100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V |
Produkt ist nicht verfügbar |