CSD17305Q5A Texas Instruments
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 2.46 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.21 EUR |
| 2500+ | 1.12 EUR |
| 5000+ | 1.08 EUR |
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Technische Details CSD17305Q5A Texas Instruments
Description: MOSFET N-CH 30V 29A/100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +10V, -8V, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD17305Q5A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
CSD17305Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 29A/100A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +10V, -8V Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
CSD17305Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 29A/100A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +10V, -8V Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CSD17305Q5A | TEXAS INSTRUMENTS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 60A; 3.1W; VSONP8 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 3.1W Case: VSONP8 On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CSD17305Q5A |
![]() |
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CSD17305Q5A |
![]() |
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSD17305Q5A |
![]() |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 3.1W; VSONP8
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 3.1W
Case: VSONP8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 3.1W; VSONP8
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 3.1W
Case: VSONP8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



