Weitere Produktangebote CSD17308Q3T nach Preis ab 0.65 EUR bis 2.57 EUR
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CSD17308Q3T | Texas Instruments |
 Description: MOSFET N-CH 30V 14A/44A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +10V, -8V Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Part Status: Active Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 2.7W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17308Q3T | Texas Instruments |
MOSFETs 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150 |
auf Bestellung 885 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17308Q3T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Technology: NexFET™ Type of transistor: N-MOSFET Case: VSON-CLIP8 Polarisation: unipolar Gate charge: 3.9nC Dimensions: 3.3x3.3mm On-state resistance: 9.4mΩ Power dissipation: 2.7W Gate-source voltage: ±10V Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 167A |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17308Q3T | Texas Instruments |
Description: MOSFET N-CH 30V 14A/44A 8VSON Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +10V, -8V Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Part Status: Active Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 2.7W (Ta), 28W (Tc) |
auf Bestellung 2692 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17308Q3T |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 14A/44A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 14A/44A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.95 EUR |
| 500+ | 0.86 EUR |
| 750+ | 0.82 EUR |
| 1250+ | 0.77 EUR |
| 1750+ | 0.74 EUR |
| 2500+ | 0.71 EUR |
| CSD17308Q3T |
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Hersteller: Texas Instruments
MOSFETs 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150
MOSFETs 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.57 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.68 EUR |
| 5000+ | 0.65 EUR |
| CSD17308Q3T |
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Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Technology: NexFET™
Type of transistor: N-MOSFET
Case: VSON-CLIP8
Polarisation: unipolar
Gate charge: 3.9nC
Dimensions: 3.3x3.3mm
On-state resistance: 9.4mΩ
Power dissipation: 2.7W
Gate-source voltage: ±10V
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 167A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Technology: NexFET™
Type of transistor: N-MOSFET
Case: VSON-CLIP8
Polarisation: unipolar
Gate charge: 3.9nC
Dimensions: 3.3x3.3mm
On-state resistance: 9.4mΩ
Power dissipation: 2.7W
Gate-source voltage: ±10V
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 167A
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 76+ | 0.95 EUR |
| 95+ | 0.76 EUR |
| 104+ | 0.69 EUR |
| CSD17308Q3T |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 14A/44A 8VSON
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Description: MOSFET N-CH 30V 14A/44A 8VSON
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
auf Bestellung 2692 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 11+ | 1.63 EUR |
| 100+ | 1.09 EUR |