CSD17310Q5A Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 667+ | 0.26 EUR |
| 688+ | 0.25 EUR |
| 700+ | 0.24 EUR |
| 711+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD17310Q5A Texas Instruments
Description: TEXAS INSTRUMENTS - CSD17310Q5A - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3900 µohm, SON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.3V, euEccn: NLR, Verlustleistung: 3.1W, Bauform - Transistor: SON, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 8V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 3900µohm, SVHC: No SVHC (27-Jun-2018).
Weitere Produktangebote CSD17310Q5A nach Preis ab 0.6 EUR bis 2.75 EUR
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CSD17310Q5A | Texas Instruments |
 Description: MOSFET N-CH 30V 21A/100A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +10V, -8V Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17310Q5A | Texas Instruments |
Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R |
auf Bestellung 210329 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17310Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 21A/100A 8VSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V |
auf Bestellung 210329 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17310Q5A | Texas Instruments |
Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R |
auf Bestellung 1621 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17310Q5A | Texas Instruments |
MOSFETs 30V N Channel NexFET Power MOSFET |
auf Bestellung 3019 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17310Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 21A/100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V |
auf Bestellung 8258 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17310Q5A | TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD17310Q5A - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3900 µohm, SON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 3.1W Bauform - Transistor: SON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3900µohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD17310Q5A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 21A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 21A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.68 EUR |
| 7500+ | 0.67 EUR |
| CSD17310Q5A |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R
Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R
auf Bestellung 210329 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 714+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| 10000+ | 0.74 EUR |
| 100000+ | 0.6 EUR |
| CSD17310Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 21A/100A 8VSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V
Description: MOSFET N-CH 30V 21A/100A 8VSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V
auf Bestellung 210329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 447+ | 1.2 EUR |
| CSD17310Q5A |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R
Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R
auf Bestellung 1621 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 2.67 EUR |
| 107+ | 1.59 EUR |
| 161+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.69 EUR |
| CSD17310Q5A |
|
Hersteller: Texas Instruments
MOSFETs 30V N Channel NexFET Power MOSFET
MOSFETs 30V N Channel NexFET Power MOSFET
auf Bestellung 3019 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 1.73 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |
| 2500+ | 0.74 EUR |
| 5000+ | 0.7 EUR |
| CSD17310Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 21A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V
Description: MOSFET N-CH 30V 21A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 15 V
auf Bestellung 8258 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 13+ | 1.73 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| CSD17310Q5A |
|
Hersteller: TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD17310Q5A - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3900 µohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.3V
euEccn: NLR
Verlustleistung: 3.1W
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 8V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3900µohm
SVHC: No SVHC (27-Jun-2018)
Description: TEXAS INSTRUMENTS - CSD17310Q5A - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3900 µohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.3V
euEccn: NLR
Verlustleistung: 3.1W
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 8V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 3900µohm
SVHC: No SVHC (27-Jun-2018)
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)