CSD17312Q5 Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 227+ | 0.77 EUR |
| 231+ | 0.75 EUR |
| 233+ | 0.71 EUR |
| 250+ | 0.7 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.67 EUR |
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Technische Details CSD17312Q5 Texas Instruments
Description: MOSFET N-CH 30V 38A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V, Power Dissipation (Max): 3.2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5240 pF @ 15 V.
Weitere Produktangebote CSD17312Q5 nach Preis ab 1.68 EUR bis 5.7 EUR
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CSD17312Q5 | Texas Instruments |
 Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17312Q5 | Texas Instruments |
Description: MOSFET N-CH 30V 38A/100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5240 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17312Q5 | Texas Instruments |
Description: MOSFET N-CH 30V 38A/100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5240 pF @ 15 V |
auf Bestellung 6002 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17312Q5 | Texas Instruments |
Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 1810 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17312Q5 | Texas Instruments |
MOSFETs 30V N-Channel NexFET Power MOSFET |
auf Bestellung 1955 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17312Q5 | Texas Instruments |
N-канальний ПТ, Udss, В = 30, Id = 100 А, Ciss, пФ @ Uds, В = 5240 @ 15, Qg, нКл = 36 @ 4.5 В, Rds = 1.5 мОм @ 35 А, 8 В, Ugs(th) = 1,5 В @ 250 мкА, Р, Вт = 3,2, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SON-8 Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
verfügbar 84 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| CSD17312Q5 |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.7 EUR |
| CSD17312Q5 |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 38A/100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5240 pF @ 15 V
Description: MOSFET N-CH 30V 38A/100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5240 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.73 EUR |
| CSD17312Q5 |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 38A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5240 pF @ 15 V
Description: MOSFET N-CH 30V 38A/100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5240 pF @ 15 V
auf Bestellung 6002 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.38 EUR |
| 10+ | 3.49 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.06 EUR |
| CSD17312Q5 |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.62 EUR |
| 49+ | 3.52 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.68 EUR |
| CSD17312Q5 |
|
Hersteller: Texas Instruments
MOSFETs 30V N-Channel NexFET Power MOSFET
MOSFETs 30V N-Channel NexFET Power MOSFET
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.7 EUR |
| 10+ | 3.69 EUR |
| 100+ | 1.89 EUR |
| CSD17312Q5 |
|
Hersteller: Texas Instruments
N-канальний ПТ, Udss, В = 30, Id = 100 А, Ciss, пФ @ Uds, В = 5240 @ 15, Qg, нКл = 36 @ 4.5 В, Rds = 1.5 мОм @ 35 А, 8 В, Ugs(th) = 1,5 В @ 250 мкА, Р, Вт = 3,2, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SON-8 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
N-канальний ПТ, Udss, В = 30, Id = 100 А, Ciss, пФ @ Uds, В = 5240 @ 15, Qg, нКл = 36 @ 4.5 В, Rds = 1.5 мОм @ 35 А, 8 В, Ugs(th) = 1,5 В @ 250 мкА, Р, Вт = 3,2, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SON-8 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 84 Stücke: