Technische Details CSD17313Q2T Texas Instruments
Description: MOSFET N-CH 30V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V, Power Dissipation (Max): 2.4W (Ta), 17W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.
Weitere Produktangebote CSD17313Q2T nach Preis ab 0.77 EUR bis 2.83 EUR
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CSD17313Q2T | Texas Instruments |
 Description: MOSFET N-CH 30V 5A 6WSONPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V Power Dissipation (Max): 2.4W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17313Q2T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 17W; WSON6; 2x2mm Type of transistor: N-MOSFET Technology: NexFET™ Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Case: WSON6 Gate-source voltage: ±10V Gate charge: 2.1nC Dimensions: 2x2mm On-state resistance: 26mΩ Drain current: 5A Power dissipation: 17W Drain-source voltage: 30V Kind of channel: enhancement |
auf Bestellung 1615 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17313Q2T | Texas Instruments |
Description: MOSFET N-CH 30V 5A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V Power Dissipation (Max): 2.4W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
auf Bestellung 17845 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17313Q2T | Texas Instruments |
MOSFETs 30V N-Channel NexFE T Power Mosfet A 595 A 595-CSD17313Q2 |
auf Bestellung 4814 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17313Q2T | Texas Instruments |
Trans MOSFET N-CH Si 30V 7.3A 6-Pin WSON EP T/R |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD17313Q2T |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.04 EUR |
| 500+ | 0.95 EUR |
| 750+ | 0.9 EUR |
| 1250+ | 0.84 EUR |
| 1750+ | 0.81 EUR |
| 2500+ | 0.78 EUR |
| CSD17313Q2T |
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Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 17W; WSON6; 2x2mm
Type of transistor: N-MOSFET
Technology: NexFET™
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Case: WSON6
Gate-source voltage: ±10V
Gate charge: 2.1nC
Dimensions: 2x2mm
On-state resistance: 26mΩ
Drain current: 5A
Power dissipation: 17W
Drain-source voltage: 30V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 17W; WSON6; 2x2mm
Type of transistor: N-MOSFET
Technology: NexFET™
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Case: WSON6
Gate-source voltage: ±10V
Gate charge: 2.1nC
Dimensions: 2x2mm
On-state resistance: 26mΩ
Drain current: 5A
Power dissipation: 17W
Drain-source voltage: 30V
Kind of channel: enhancement
auf Bestellung 1615 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 68+ | 1.06 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.77 EUR |
| CSD17313Q2T |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 17845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.82 EUR |
| 10+ | 1.79 EUR |
| 100+ | 1.2 EUR |
| CSD17313Q2T |
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Hersteller: Texas Instruments
MOSFETs 30V N-Channel NexFE T Power Mosfet A 595 A 595-CSD17313Q2
MOSFETs 30V N-Channel NexFE T Power Mosfet A 595 A 595-CSD17313Q2
auf Bestellung 4814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.83 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.81 EUR |
| 2500+ | 0.78 EUR |
| CSD17313Q2T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 7.3A 6-Pin WSON EP T/R
Trans MOSFET N-CH Si 30V 7.3A 6-Pin WSON EP T/R
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)