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CSD17318Q2

CSD17318Q2 Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17318q2
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.24 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD17318Q2 Texas Instruments

Description: MOSFET N-CH 30V 25A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V.

Weitere Produktangebote CSD17318Q2 nach Preis ab 0.23 EUR bis 1.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
CSD17318Q2 CSD17318Q2 Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17318q2 Description: MOSFET N-CH 30V 25A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
auf Bestellung 12435 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
31+0.7 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.31 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17318Q2 CSD17318Q2 Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17318q2 MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17318Q2T
auf Bestellung 5801 Stücke:
Lieferzeit 10-14 Tag (e)
4+1.12 EUR
10+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17318Q2 Texas Instruments csd17318q2.pdf N-канальний ПТ, Udss, В = 30, Id = 25 А, Ptot, Вт = 16, Тип монт. = smd, Ciss, пФ @ Uds, В = 879 @ 15, Qg, нКл = 6 @ 4,5 В, Rds = 15,1 мОм @ 8 A, 8 В, Tексп, °C = -55...+150, Ugs(th) = 1,2 В @ 250 мкА,... Транзистори Корпус: WDFN-6 (Exp. Pad) Од. вим: шт
Anzahl je Verpackung: 250 Stücke
verfügbar 5 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
CSD17318Q2 suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17318q2
CSD17318Q2
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
auf Bestellung 12435 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
31+0.7 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.31 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17318Q2 suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17318q2
CSD17318Q2
Hersteller: Texas Instruments
MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17318Q2T
auf Bestellung 5801 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.12 EUR
10+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17318Q2 csd17318q2.pdf
Hersteller: Texas Instruments
N-канальний ПТ, Udss, В = 30, Id = 25 А, Ptot, Вт = 16, Тип монт. = smd, Ciss, пФ @ Uds, В = 879 @ 15, Qg, нКл = 6 @ 4,5 В, Rds = 15,1 мОм @ 8 A, 8 В, Tексп, °C = -55...+150, Ugs(th) = 1,2 В @ 250 мкА,... Транзистори Корпус: WDFN-6 (Exp. Pad) Од. вим: шт
Anzahl je Verpackung: 250 Stücke
verfügbar 5 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH