CSD17318Q2 Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
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Technische Details CSD17318Q2 Texas Instruments
Description: MOSFET N-CH 30V 25A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V.
Weitere Produktangebote CSD17318Q2 nach Preis ab 0.19 EUR bis 0.94 EUR
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CSD17318Q2 | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 25A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 12435 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17318Q2 | Hersteller : Texas Instruments |
MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17318Q2T |
auf Bestellung 5801 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17318Q2 | Hersteller : Texas Instruments |
N-канальний ПТ, Udss, В = 30, Id = 25 А, Ptot, Вт = 16, Тип монт. = smd, Ciss, пФ @ Uds, В = 879 @ 15, Qg, нКл = 6 @ 4,5 В, Rds = 15,1 мОм @ 8 A, 8 В, Tексп, °C = -55...+150, Ugs(th) = 1,2 В @ 250 мкА,... Група товару: Транзистори Корпус: WDFN-6 (Exp. Pad Anzahl je Verpackung: 250 Stücke |
verfügbar 5 Stücke: |
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CSD17318Q2 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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CSD17318Q2 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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CSD17318Q2 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |