CSD17382F4 Texas Instruments

Description: MOSFET N-CH 30V 2.3A 3PICOSTAR, Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): 10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Part Status: Active, Supplier Device Package: 3-PICOSTAR, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).