Technische Details CSD17382F4T Texas Instruments
Description: MOSFET N-CH 30V 2.3A 3PICOSTAR, Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): 10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Supplier Device Package: 3-PICOSTAR, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD17382F4T nach Preis ab 0.46 EUR bis 2.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD17382F4T | Texas Instruments |
 Trans MOSFET N-CH 30V 2.3A 3-Pin PicoStar T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
CSD17382F4T | Texas Instruments |
Description: MOSFET N-CH 30V 2.3A 3PICOSTAR Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): 10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
CSD17382F4T | Texas Instruments |
Description: MOSFET N-CH 30V 2.3A 3PICOSTAR Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): 10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V |
auf Bestellung 14010 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
CSD17382F4T | Texas Instruments |
MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17382F4 |
auf Bestellung 1504 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
CSD17382F4T | Texas Instruments |
Trans MOSFET N-CH 30V 2.3A 3-Pin PicoStar T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD17382F4T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 2.3A 3-Pin PicoStar T/R
Trans MOSFET N-CH 30V 2.3A 3-Pin PicoStar T/R
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 320+ | 0.46 EUR |
| CSD17382F4T |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 2.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 2.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.86 EUR |
| 500+ | 0.74 EUR |
| 1250+ | 0.6 EUR |
| 2500+ | 0.56 EUR |
| 6250+ | 0.54 EUR |
| 12500+ | 0.51 EUR |
| CSD17382F4T |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 2.3A 3PICOSTAR
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V
Description: MOSFET N-CH 30V 2.3A 3PICOSTAR
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V
auf Bestellung 14010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.87 EUR |
| CSD17382F4T |
|
Hersteller: Texas Instruments
MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17382F4
MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17382F4
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| 2500+ | 0.56 EUR |
| CSD17382F4T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 2.3A 3-Pin PicoStar T/R
Trans MOSFET N-CH 30V 2.3A 3-Pin PicoStar T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)