Technische Details CSD17505Q5A Texas Instruments
Description: MOSFET N-CH 30V 24A/100A 8VSON, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 3.2W (Ta), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN.
Weitere Produktangebote CSD17505Q5A nach Preis ab 1.55 EUR bis 3.25 EUR
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CSD17505Q5A | Texas Instruments |
 Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17505Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 24A/100A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 3.2W (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN |
auf Bestellung 1596 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD17505Q5A |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R
Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.68 EUR |
| CSD17505Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 24A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 3.2W (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Description: MOSFET N-CH 30V 24A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 3.2W (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.71 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.55 EUR |