CSD17506Q5A Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 11+ | 1.75 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.06 EUR |
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Technische Details CSD17506Q5A Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V.
Weitere Produktangebote CSD17506Q5A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| CSD17506Q5A | Texas Instruments |
N-канальний ПТ, Udss, В = 30, Id = 100 А, Ptot, Вт = 3,2, Тип монт. = smd, Ciss, пФ @ Uds, В = 1650 @ 15, Qg, нКл = 11 @ 4,5 В, Rds = 4 мОм @ 20 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 1,8 В @ 250 мкA,... Транзистори Корпус: SON-8 Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
CSD17506Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
CSD17506Q5A | Texas Instruments |
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17577Q5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CSD17506Q5A |
|
Hersteller: Texas Instruments
N-канальний ПТ, Udss, В = 30, Id = 100 А, Ptot, Вт = 3,2, Тип монт. = smd, Ciss, пФ @ Uds, В = 1650 @ 15, Qg, нКл = 11 @ 4,5 В, Rds = 4 мОм @ 20 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 1,8 В @ 250 мкA,... Транзистори Корпус: SON-8 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
N-канальний ПТ, Udss, В = 30, Id = 100 А, Ptot, Вт = 3,2, Тип монт. = smd, Ciss, пФ @ Uds, В = 1650 @ 15, Qg, нКл = 11 @ 4,5 В, Rds = 4 мОм @ 20 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 1,8 В @ 250 мкA,... Транзистори Корпус: SON-8 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CSD17506Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CSD17506Q5A |
|
Hersteller: Texas Instruments
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17577Q5A
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17577Q5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH