
auf Bestellung 2387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.64 EUR |
10+ | 1.33 EUR |
100+ | 0.98 EUR |
500+ | 0.78 EUR |
1000+ | 0.72 EUR |
2500+ | 0.64 EUR |
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Technische Details CSD17552Q5A Texas Instruments
Description: MOSFET N-CH 30V 17A/60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V.
Weitere Produktangebote CSD17552Q5A nach Preis ab 0.78 EUR bis 1.71 EUR
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CSD17552Q5A | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V |
auf Bestellung 4925 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17552Q5A | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD17552Q5A | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD17552Q5A | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD17552Q5A | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V |
Produkt ist nicht verfügbar |