CSD17559Q5 Texas Instruments
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.59 EUR |
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Technische Details CSD17559Q5 Texas Instruments
Description: MOSFET N-CH 30V 40A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V, Power Dissipation (Max): 3.2W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 1.7V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 15 V.
Weitere Produktangebote CSD17559Q5 nach Preis ab 1.73 EUR bis 5.3 EUR
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CSD17559Q5 | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17559Q5 | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 40A/100A 8VSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 15 V |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17559Q5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17559Q5 | Hersteller : Texas Instruments |
MOSFETs 30V N Ch NexFET Pwr MOSFET A 595-CSD17559Q5T |
auf Bestellung 2820 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17559Q5 | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 40A/100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 15 V |
auf Bestellung 2346 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17559Q5 | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 30V; 100A; 3.2W; VSON-CLIP8; SMT Type of transistor: N-MOSFET Technology: NexFET™ Drain-source voltage: 30V Drain current: 100A Power dissipation: 3.2W Case: VSON-CLIP8 Gate-source voltage: 20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 51nC Kind of channel: enhancement Electrical mounting: SMT |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17559Q5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD17559Q5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD17559Q5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD17559Q5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD17559Q5 | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 40A/100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 15 V |
Produkt ist nicht verfügbar |