CSD17559Q5T Texas Instruments

Description: MOSFET N-CH 30V 100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-VSON-CLIP (5x6), Vgs(th) (Max) @ Id: 1.7V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 96W (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active.