CSD17576Q5BT TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm
Case: VSON-CLIP8
Kind of channel: enhancement
Technology: NexFET™
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 2.4mΩ
Dimensions: 5x6mm
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 125W
Drain current: 100A
Kind of package: reel; tape
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
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Technische Details CSD17576Q5BT TEXAS INSTRUMENTS
Description: MOSFET N-CH 30V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V.
Weitere Produktangebote CSD17576Q5BT nach Preis ab 1.03 EUR bis 2.97 EUR
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CSD17576Q5BT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm Case: VSON-CLIP8 Kind of channel: enhancement Technology: NexFET™ Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 25nC On-state resistance: 2.4mΩ Dimensions: 5x6mm Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 125W Drain current: 100A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 438 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17576Q5BT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V |
auf Bestellung 10250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17576Q5BT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V |
auf Bestellung 10477 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17576Q5BT | Hersteller : Texas Instruments |
MOSFETs 30V, N-channel NexFET Pwr MOSFET |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17576Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
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CSD17576Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
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CSD17576Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD17576Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |