Weitere Produktangebote CSD17577Q3A nach Preis ab 0.32 EUR bis 1.59 EUR
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CSD17577Q3A | Texas Instruments |
Description: MOSFET N-CH 30V 35A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q3A | Texas Instruments |
Description: MOSFET N-CH 30V 35A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 10021 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q3A | Texas Instruments |
MOSFETs 30V N-channel NexFE T Pwr MOSFET A 595-C A 595-CSD17577Q3AT |
auf Bestellung 15734 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q3A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 35A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Description: MOSFET N-CH 30V 35A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.33 EUR |
| 7500+ | 0.32 EUR |
| CSD17577Q3A |
![]() |
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 35A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 35A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 10021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.48 EUR |
| 20+ | 0.91 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| CSD17577Q3A |
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Hersteller: Texas Instruments
MOSFETs 30V N-channel NexFE T Pwr MOSFET A 595-C A 595-CSD17577Q3AT
MOSFETs 30V N-channel NexFE T Pwr MOSFET A 595-C A 595-CSD17577Q3AT
auf Bestellung 15734 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.43 EUR |
| 2500+ | 0.39 EUR |
| 5000+ | 0.35 EUR |



