Technische Details CSD17577Q3AT Texas Instruments
Description: MOSFET N-CH 30V 35A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V, Power Dissipation (Max): 2.8W (Ta), 53W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V.
Weitere Produktangebote CSD17577Q3AT nach Preis ab 0.71 EUR bis 5.03 EUR
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CSD17577Q3AT | Texas Instruments |
 Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Texas Instruments |
Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Texas Instruments |
Description: MOSFET N-CH 30V 35A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V |
auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q3AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 53W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC Dimensions: 3.3x3.3mm |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Texas Instruments |
Description: MOSFET N-CH 30V 35A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V |
auf Bestellung 1910 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q3AT | Texas Instruments |
MOSFETs 30V NCH NexFET MOSFE T A 595-CSD17577Q3A A 595-CSD17577Q3A |
auf Bestellung 866 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q3AT | Texas Instruments |
MOSFET N-CH 30V 35A VSON-8 Транзистори |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q3AT |
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Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R
Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.71 EUR |
| CSD17577Q3AT |
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Hersteller: Texas Instruments
Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R
Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.71 EUR |
| CSD17577Q3AT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 35A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Description: MOSFET N-CH 30V 35A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
auf Bestellung 1750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.12 EUR |
| 500+ | 0.94 EUR |
| 750+ | 0.92 EUR |
| 1250+ | 0.89 EUR |
| 1750+ | 0.88 EUR |
| CSD17577Q3AT |
|
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 53W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
Dimensions: 3.3x3.3mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 53W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
Dimensions: 3.3x3.3mm
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 1.64 EUR |
| 54+ | 1.33 EUR |
| 62+ | 1.16 EUR |
| 100+ | 0.93 EUR |
| CSD17577Q3AT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 35A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
Description: MOSFET N-CH 30V 35A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V
auf Bestellung 1910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.13 EUR |
| CSD17577Q3AT |
|
Hersteller: Texas Instruments
MOSFETs 30V NCH NexFET MOSFE T A 595-CSD17577Q3A A 595-CSD17577Q3A
MOSFETs 30V NCH NexFET MOSFE T A 595-CSD17577Q3A A 595-CSD17577Q3A
auf Bestellung 866 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.99 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.9 EUR |
| CSD17577Q3AT |
|
Hersteller: Texas Instruments
MOSFET N-CH 30V 35A VSON-8 Транзистори
MOSFET N-CH 30V 35A VSON-8 Транзистори
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.03 EUR |