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CSD17578Q3AT

CSD17578Q3AT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+1.11 EUR
500+0.97 EUR
750+0.93 EUR
1250+0.9 EUR
1750+0.89 EUR
2500+0.88 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD17578Q3AT Texas Instruments

Description: MOSFET N-CH 30V 20A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (3x3.3), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 37W (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote CSD17578Q3AT nach Preis ab 0.87 EUR bis 3.1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD17578Q3AT CSD17578Q3AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 37W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.9nC
Dimensions: 3.3x3.3mm
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
63+1.14 EUR
74+0.97 EUR
100+0.87 EUR
Mindestbestellmenge: 55 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17578Q3AT CSD17578Q3AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a Description: MOSFET N-CH 30V 20A 8VSON
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V
auf Bestellung 4162 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+1.97 EUR
100+1.11 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17578Q3AT CSD17578Q3AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17578Q3A
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.1 EUR
10+1.99 EUR
100+1.16 EUR
500+1 EUR
1000+0.9 EUR
2500+0.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD17578Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a
CSD17578Q3AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 37W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.9nC
Dimensions: 3.3x3.3mm
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
55+1.32 EUR
63+1.14 EUR
74+0.97 EUR
100+0.87 EUR
Mindestbestellmenge: 55 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17578Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a
CSD17578Q3AT
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V
auf Bestellung 4162 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.92 EUR
10+1.97 EUR
100+1.11 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17578Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17578q3a
CSD17578Q3AT
Hersteller: Texas Instruments
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17578Q3A
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.1 EUR
10+1.99 EUR
100+1.16 EUR
500+1 EUR
1000+0.9 EUR
2500+0.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH