Technische Details CSD17578Q5AT Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD17578Q5AT nach Preis ab 1.22 EUR bis 2.25 EUR
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CSD17578Q5AT | Texas Instruments |
 Description: MOSFET N-CH 30V 25A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17578Q5AT | Texas Instruments |
Description: MOSFET N-CH 30V 25A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 1488 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q5AT |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 25A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.42 EUR |
| 500+ | 1.22 EUR |
| CSD17578Q5AT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 25A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 10+ | 1.84 EUR |
| 100+ | 1.43 EUR |