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CSD17579Q3AT Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q3a
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+1.12 EUR
500+1.02 EUR
750+0.96 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD17579Q3AT Texas Instruments

Description: MOSFET N-CH 30V 20A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (3x3.3), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 29W (Tc), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote CSD17579Q3AT nach Preis ab 0.84 EUR bis 3.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD17579Q3AT CSD17579Q3AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q3a MOSFET N-CH 30V 35A 8VSON Транзистори
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
3+1.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17579Q3AT CSD17579Q3AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q3a Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+1.91 EUR
100+1.28 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17579Q3AT CSD17579Q3AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q3a MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.01 EUR
10+1.92 EUR
100+1.12 EUR
500+1.09 EUR
1000+0.97 EUR
2500+0.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD17579Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q3a
Hersteller: Texas Instruments
MOSFET N-CH 30V 35A 8VSON Транзистори
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
3+1.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17579Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q3a
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.99 EUR
10+1.91 EUR
100+1.28 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17579Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17579q3a
Hersteller: Texas Instruments
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.01 EUR
10+1.92 EUR
100+1.12 EUR
500+1.09 EUR
1000+0.97 EUR
2500+0.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH