Technische Details CSD17579Q5A Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD17579Q5A nach Preis ab 0.4 EUR bis 1.88 EUR
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CSD17579Q5A | Texas Instruments |
 MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17579Q5AT |
auf Bestellung 4294 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17579Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 25A 8VSON Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
auf Bestellung 1772 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD17579Q5A |
|
Hersteller: Texas Instruments
MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17579Q5AT
MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17579Q5AT
auf Bestellung 4294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.45 EUR |
| 5000+ | 0.4 EUR |
| CSD17579Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 25A 8VSON
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
auf Bestellung 1772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.88 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |