CSD17579Q5AT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 30V 25A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.12 EUR |
| 500+ | 0.98 EUR |
| 750+ | 0.94 EUR |
| 1250+ | 0.91 EUR |
| 1750+ | 0.9 EUR |
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Technische Details CSD17579Q5AT Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V, Power Dissipation (Max): 3.1W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V.
Weitere Produktangebote CSD17579Q5AT nach Preis ab 0.79 EUR bis 2.83 EUR
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CSD17579Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 36W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 236 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17579Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 36W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm |
auf Bestellung 236 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17579Q5AT | Hersteller : Texas Instruments |
MOSFETs 30V N-Channel NexFET Power MOSFET A 595-CSD17579Q5A |
auf Bestellung 1099 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17579Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 25A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V |
auf Bestellung 2209 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17579Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD17579Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD17579Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |