CSD17579Q5AT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 250+ | 1.17 EUR |
| 500+ | 1.06 EUR |
| 750+ | 1.01 EUR |
| 1250+ | 0.95 EUR |
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Technische Details CSD17579Q5AT Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD17579Q5AT nach Preis ab 0.88 EUR bis 3.13 EUR
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CSD17579Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 36W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17579Q5AT | Texas Instruments |
Description: MOSFET N-CH 30V 25A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 1603 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17579Q5AT | Texas Instruments |
MOSFETs 30V N-Channel NexFET Power MOSFET A 595- A 595-CSD17579Q5A |
auf Bestellung 259 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q5AT |
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Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Power dissipation: 36W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Power dissipation: 36W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 49+ | 1.49 EUR |
| 57+ | 1.26 EUR |
| 66+ | 1.09 EUR |
| 100+ | 1.06 EUR |
| CSD17579Q5AT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 25A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 25A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1603 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.12 EUR |
| 10+ | 1.98 EUR |
| 100+ | 1.34 EUR |
| CSD17579Q5AT |
|
Hersteller: Texas Instruments
MOSFETs 30V N-Channel NexFET Power MOSFET A 595- A 595-CSD17579Q5A
MOSFETs 30V N-Channel NexFET Power MOSFET A 595- A 595-CSD17579Q5A
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.13 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.17 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.91 EUR |
| 2500+ | 0.88 EUR |