CSD17581Q3A Texas Instruments
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.6 EUR |
| 5000+ | 0.55 EUR |
| 10000+ | 0.52 EUR |
| 15000+ | 0.48 EUR |
| 20000+ | 0.45 EUR |
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Technische Details CSD17581Q3A Texas Instruments
Description: MOSFET N-CH 30V 21A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V, Power Dissipation (Max): 2.8W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 1.7V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V.
Weitere Produktangebote CSD17581Q3A nach Preis ab 0.35 EUR bis 2.5 EUR
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CSD17581Q3A | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 30V 21A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V |
auf Bestellung 1495 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17581Q3A | Hersteller : Texas Instruments |
MOSFETs 30-V N channel NexF ET power MOSFET si A 595-CSD17581Q3AT |
auf Bestellung 1015 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17581Q3A | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 30V; 60A; 63W; VSONP8; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 30V Drain current: 60A Power dissipation: 63W Case: VSONP8 Gate-source voltage: 20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 54nC Kind of channel: enhancement Electrical mounting: SMT |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17581Q3A | Hersteller : Texas Instruments |
Transistor N-Channel MOSFET; 30V; 20V; 4,7mOhm; 101A; 63W; -55°C ~ 150°C; CSD17581Q3AT CSD17581Q3A TCSD17581q3a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17581Q3A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD17581Q3A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD17581Q3A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD17581Q3A | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 21A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V |
Produkt ist nicht verfügbar |