CSD17581Q3AT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 30V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.09 EUR |
| 500+ | 0.89 EUR |
| 750+ | 0.83 EUR |
| 1250+ | 0.72 EUR |
| 1750+ | 0.63 EUR |
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Technische Details CSD17581Q3AT Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V, Power Dissipation (Max): 2.8W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 1.7V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V.
Weitere Produktangebote CSD17581Q3AT nach Preis ab 0.7 EUR bis 2.62 EUR
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CSD17581Q3AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Technology: NexFET™ Type of transistor: N-MOSFET Polarisation: unipolar Case: VSONP8 Gate charge: 20nC Dimensions: 3.3x3.3mm On-state resistance: 3.9mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 60A Power dissipation: 63W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1068 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17581Q3AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Technology: NexFET™ Type of transistor: N-MOSFET Polarisation: unipolar Case: VSONP8 Gate charge: 20nC Dimensions: 3.3x3.3mm On-state resistance: 3.9mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 60A Power dissipation: 63W |
auf Bestellung 1068 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17581Q3AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V |
auf Bestellung 9252 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17581Q3AT | Hersteller : Texas Instruments |
MOSFETs 30V N-Channel NexFET A 595-CSD17581Q3A |
auf Bestellung 1061 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17581Q3AT Produktcode: 177865
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CSD17581Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R |
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CSD17581Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R |
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CSD17581Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R |
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CSD17581Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |