Weitere Produktangebote CSD17581Q5AT nach Preis ab 0.79 EUR bis 2.87 EUR
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CSD17581Q5AT | Texas Instruments |
 Description: MOSFET N-CH 30V 24A/123A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17581Q5AT | Texas Instruments |
Description: MOSFET N-CH 30V 24A/123A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V |
auf Bestellung 1140 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17581Q5AT | Texas Instruments |
MOSFETs 30V N-Ch NexFET Pow er MOSFET A 595-CSD1 A 595-CSD17581Q5A |
auf Bestellung 1551 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 24A/123A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
Description: MOSFET N-CH 30V 24A/123A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.98 EUR |
| 500+ | 0.89 EUR |
| 750+ | 0.84 EUR |
| CSD17581Q5AT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 24A/123A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
Description: MOSFET N-CH 30V 24A/123A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
auf Bestellung 1140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 11+ | 1.68 EUR |
| 100+ | 1.13 EUR |
| CSD17581Q5AT |
|
Hersteller: Texas Instruments
MOSFETs 30V N-Ch NexFET Pow er MOSFET A 595-CSD1 A 595-CSD17581Q5A
MOSFETs 30V N-Ch NexFET Pow er MOSFET A 595-CSD1 A 595-CSD17581Q5A
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.83 EUR |
| 2500+ | 0.79 EUR |