Technische Details CSD18502KCS Texas Instruments
Description: TEXAS INSTRUMENTS - CSD18502KCS - Leistungs-MOSFET, n-Kanal, 40 V, 212 A, 2400 µohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 212A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 1.8V, Verlustleistung: 259W, SVHC: No SVHC (27-Jun-2018), Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: NexFET, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 2400µohm.
Weitere Produktangebote CSD18502KCS nach Preis ab 1.64 EUR bis 6.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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CSD18502KCS | Texas Instruments |
 Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18502KCS | Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18502KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3 Kind of package: tube Case: TO220-3 On-state resistance: 2.4mΩ Mounting: THT Power dissipation: 259W Gate charge: 52nC Polarisation: unipolar Technology: NexFET™ Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Heatsink thickness: 1.14...1.4mm Type of transistor: N-MOSFET Gate-source voltage: ±20V |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18502KCS | Texas Instruments |
MOSFETs 40-V N-Chanel NxFT P wr MOSFETs |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18502KCS | Texas Instruments |
Description: MOSFET N-CH 40V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 20 V |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18502KCS | TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD18502KCS - Leistungs-MOSFET, n-Kanal, 40 V, 212 A, 2400 µohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 212A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.8V Verlustleistung: 259W SVHC: No SVHC (27-Jun-2018) Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: NexFET productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2400µohm |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Texas Instruments
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 106+ | 1.64 EUR |
| CSD18502KCS |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 2.96 EUR |
| 100+ | 2.5 EUR |
| CSD18502KCS |
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Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3
Kind of package: tube
Case: TO220-3
On-state resistance: 2.4mΩ
Mounting: THT
Power dissipation: 259W
Gate charge: 52nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3
Kind of package: tube
Case: TO220-3
On-state resistance: 2.4mΩ
Mounting: THT
Power dissipation: 259W
Gate charge: 52nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 4 EUR |
| 38+ | 2.3 EUR |
| 50+ | 2.25 EUR |
| CSD18502KCS |
|
Hersteller: Texas Instruments
MOSFETs 40-V N-Chanel NxFT P wr MOSFETs
MOSFETs 40-V N-Chanel NxFT P wr MOSFETs
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.24 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.12 EUR |
| CSD18502KCS |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 20 V
Description: MOSFET N-CH 40V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 259W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 20 V
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.34 EUR |
| 50+ | 3.18 EUR |
| CSD18502KCS |
|
Hersteller: TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD18502KCS - Leistungs-MOSFET, n-Kanal, 40 V, 212 A, 2400 µohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 212A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.8V
Verlustleistung: 259W
SVHC: No SVHC (27-Jun-2018)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: NexFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2400µohm
Description: TEXAS INSTRUMENTS - CSD18502KCS - Leistungs-MOSFET, n-Kanal, 40 V, 212 A, 2400 µohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 212A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.8V
Verlustleistung: 259W
SVHC: No SVHC (27-Jun-2018)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: NexFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2400µohm
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 6.62 EUR |
| 72+ | 3.22 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.31 EUR |